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Descr: . Electronic Components Datasheets Active components Transistors KEC kq9n50p_f.pdf
Group:Electronics > Components > Transistors
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SEMICONDUCTOR KQ9N50P/F N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast TENTATIVE switching time, low on resistance, low gate charge and excellent KQ9N50P avalanche characteristics. It is mainly suitable for electronic ballast and A O switching mode power supplies. C F E G DIM MILLIMETERS FEATURES B A _ 9.9 + 0.2 B 15.95 MAX VDSS(Min.)= 500V, ID= 9A Q C 1.3+0.1/-0.05 I D _ 0.8 + 0.1 Drain-Source ON Resistance : RDS(ON)=0.8 @VGS =10V E _ 3.6 + 0.2

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